TSU scientists have created semiconductor materials
01.09.2016

Chemists of the SPhTI (Siberian Physical and Technical Institute) have developed the composition and technology of producing nanodispersed metal oxide semiconductor materials. During the synthesis they define the necessary properties such as the ability to absorb or reflect infrared radiation. The invention can be applied in many different areas - to improve the efficiency of solar cells, protect spacecraft from overheating, and produce smartphone screens, tablets, and other gadgets.

- Our materials consist of complex oxide systems based on indium and tin, - said Tatyana Malinovskaya, head of the project, scientist at the Innovation and Technology Centre (ITC) of the SPhTI. - In the process of synthesis, the elements that increase the concentration of free charge carriers are introduced into their structure, which allows setting the desired material properties.

For example, it is possible to vary the level of absorption and reflection of electromagnetic radiation in a predetermined wavelength range. Selective coatings based on nanodispersed semiconductor materials may be used in aircraft construction and shipbuilding and aerospace and solar engineering to maintain the desired thermal conditions of the object and protect its instruments from overheating.

Along with this, the technology of synthesis of dispersed semiconductor materials developed in ITC SPhTI creates an opportunity to establish commercial production targets for magnetron sputtering in Russia. The world's leading electronics manufacturers use them in the production of thin film transparent conductive coatings for TV screens, tablets, smartphones, and others. Now the RF buys targets in Japan and Korea at a high price. The cost of Russian analogs can be significantly lower.

- In order to achieve homogeneous target structure, international manufacturers mixed oxides, and for five hours cut them very small in a wet environment with subsequent drying and granulation to extract a fraction of fine particles having a diameter from 0.1 to several microns, - said Tatyana Malinovskaya. - The resulting mixture is subjected to pre-molding and pressing, with subsequent sintering at temperatures from 1,200 to 1,500 ° C for 10 hours.

TSU scientists used a sol-gel method for the synthesis of finely dispersed mixed oxide nanoparticles and immediately got the desired size. This saves time, effort, and money, reducing the cost of the final product.

A distinctive feature of the technology of semiconductor materials developed by ITC SPhTI chemists is the absence of toxic byproducts, so in industrial use, the danger of emissions of harmful substances is eliminated. A pilot plant for the synthesis constructed by scientists currently allows producing nanodispersed metal oxide materials with controlled characteristics in a sufficient quantity.